Effects of ALD HfO2 thickness on charge trapping and mobility

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 218-221

  Sim, J H ^a,c   Song, S C ^a   Kirsch, P D ^a,b   Young, C D ^a   Choi, R ^a   Kwong, D L ^c   Lee, B H ^a,b   Bersuker, G ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Charge trapping; High k; Mobility

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL CARRIER MOBILITY; CHARGE TRAPPING; HIGH-K; MOBILITY;

ELECTRON TRAPS;

EID: 19944414328     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.071     Document Type: Conference Paper

References (15)

1. B.H. Lee IEDM Tech. Dig. 1999 133 136
2. L. Pantisano VLSI Technology 2003 163 164
3. B.H. Lee IEDM Tech. Dig. 2004 859 862
4. G. Bersuker IRW 2004 141 144
5. E.P. Gusev IEDM Tech. Dig. 2001 451 455
6. A. Kerber Proceedings of IRPS 2003 41 44
7. D.V. Singh IEDM Tech. Dig. 2004 863 866
8. C.D. Young Proceedings of IRPS 2004 597 598
9. B.H. Lee Proceedings of IRPS 2004 691 692
10. J.H. Sim et al., Ext. Abs. of SSDM, p.214-215, 2004
11. G. Bersuker Proceedings of IRPS 2004 691 694
12. C.D.Young et al., SEMATECH Wkshp on Elect. Char. & Rel. on High-k Dielectrics, Austin, TX Nov. 2004.
13. G. Bersuker JJAP 43 113 2004 7899 7902
14. C.D.Young, et al., to be presented in IRPS, 2005.
15. C. Leroux IEDM Tech. Dig. 2004 737 740