Effect of F2 postmetallization annealing on the electrical and reliability characteristics of HfSiO gate dielectric

IEEE Electron Device Letters

Volumn 28, Issue 1, 2007, Pages 21-23

  Chang, Man ^a   Jo, Minseok ^a   Park, Hokyung ^a   Hwang, Hyunsang ^a   Lee, Byoung Hun ^b   Choi, Rino ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SEMATECH   (United States)

Author keywords

Bias temperature instability; Fluorine annealing; High ; Hot carrier stress (HCS)

Indexed keywords

ANNEALING; ELECTRON TRAPS; FLUORINE; HAFNIUM COMPOUNDS; HOT CARRIERS; METALLIZING; TRANSCONDUCTANCE;

BIAS TEMPERATURE INSTABILITY; FLUORINE ANNEALING; HOT-CARRIER STRESS; INTERFACE TRAP DENSITY;

MOSFET DEVICES;

EID: 33845992218     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.887941     Document Type: Article

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