Comparison between atomic-layer-deposited HfO2 films using O3 or H2 O oxidant and Hf [N (CH3) 2] 4 precursor

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 5953-5955

  Cho, Moonju ^a   Jeong, Doo Seok ^a   Park, Jaehoo ^a   Park, Hong Bae ^a   Lee, Suk Woo ^a   Park, Tae Joo ^a   Hwang, Cheol Seong ^a   Jang, Gi Hoon ^b   Jeong, Jaehack ^b  

^a Seoul National University   (South Korea)

^b Ever tek Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL IMPURITIES; CURRENT DENSITY; DIELECTRIC PROPERTIES; FILM GROWTH; LEAKAGE CURRENTS; OXIDATION; SILICON WAFERS;

ATOMIC LAYER DEPOSITION (ALD); FORMING GAS ANNEALING (FGA); METAL INSULATOR SEMICONDUCTOR CAPACITORS; PRECURSORS;

THIN FILMS;

EID: 17944369303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829773     Document Type: Article

References (14)

1. Suntola and J. Antson, US Patent No. 4058430 (15 November 1977).
2. M. Cho, J. Park, H. B. Park, C. S. Hwang, J. Jeong, and K. S. Hyun, Appl. Phys. Lett. 81, 334 (2002).
3. M. Cho, H. B. Park, J. Park, S. W. Lee, C. S. Hwang, G. H. Jang, and J. Jeong, Appl. Phys. Lett. 83, 5503 (2003).
4. H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, and M.-H. Cho, Electrochem. Solid-State Lett. 7 F42 (2004).
5. H. B. Park, M. Cho, J. Park, S. W. Lee, C. S. Hwang, J.-P. Kim, J.-H. Lee, N.-I. Lee, H.-K. Kang, J.-C. Lee, and S.-J. Oh, J. Appl. Phys. 94, 3641 (2003).
6. P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H. Zhang, M. El-Bouanani, M. J. Kim, R. M. Wallace, and B. E. Gnade, Thin Solid Films 425, 68 (2003).
7. V. D. Kalganov, N. V. Mileshkina, and E. V. Ostroumova, Semiconductors 37, 354 (2003).
8. Y. T. Hou, M. F. Li, Y. Jin, and W. H. Lai, J. Appl. Phys. 91, 258 (2002).
9. M. Städele, F. Sacconi, A. Di Carlo, and P. Lugli, J. Appl. Phys. 93, 2681 (2003).
10. G. Lucovsky, Y. Wu, H. Niimi, H. Yang, J. Keister, and J. E. Rowe, J. Vac. Sci. Technol. A 18, 1163 (2000).
11. J. F. Conley, Jr., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, Appl. Phys. Lett. 82, 3508 (2003).
12. J. Schaeffer, N. V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, J. Electrochem. Soc. 150, F67 (2003).
13. P. W. Peacock and J. Robertson, Appl. Phys. Lett. 83, 2025 (2003).
14. Y.-C. Yeo, T.-J. King, and C. Hu, Appl. Phys. Lett. 81, 2091 (2002).