Novel dielectric materials for future transistor generations

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 1, 2006, Pages 221-239

  Bersuker, Gennadi ^a   Lee, Byoung Hun ^a   Huff, Howard R ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRIC APPLICATIONS; GATE ELECTRODES; MOBILITY DEGRADATION;

CRYSTALLIZATION; ELECTRONIC PROPERTIES; ELECTRONS; PERMITTIVITY; PHASE SEPARATION; TRANSISTORS;

DIELECTRIC MATERIALS;

EID: 33747713299     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S012915640600362X     Document Type: Conference Paper

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