Transient charging and relaxation in high-k gate dielectrics and their implications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2415-2419

  Lee, Byoung Hun ^a,b   Young, Chadwin ^a   Choi, Rino ^a   Sim, Jang Hwan ^a   Bersuker, Gennadi ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

Author keywords

Hf silicate; High k gate dielectric; Hot carrier effect; Mobility; TIN electrode; Transient charging effect

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; MOS DEVICES;

HF-SILICATE; HIGH-K GATE DIELECTRIC; HOT CARRIER EFFECT; TIN ELECTRODE; TRANSIENT CHARGING EFFECT;

DIELECTRIC DEVICES;

EID: 21244472673     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2415     Document Type: Conference Paper

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