Thermodynamic stability and band alignment at a metal-high- k dielectric interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 8, 2006, Pages

  Demkov, Alexander A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747624147     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.085310     Document Type: Article

References (32)

1. P. Yu and M. Cardonna, Fundamentals of Semiconductors (Springer, Berlin, 2002).
2. T. M. Duc, C. Hsu, and J. P. Faurie, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.58.1127 58, 1127 (1987);
3. T. A. Nguyen, S. Mackowski, H. E. Jackson, and L. M. Smith, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.70.125306 70, 125306 (2004).
4. W. R. L. Lambrecht and B. Segall, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.43.7070 43, 7070 (1991).
5. International Technology Roadmap for Semiconductors (ITRS), http://public.itrs.net
6. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
7. R. Chau, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2004. 828570 25, 408 (2004).
8. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
9. H. B. Michaelson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.323539 48, 4729 (1977).
10. M. Y. Lee and P. A. Bennett, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.75.4460 75, 4460 (1995).
11. W. Schottky, Z. Phys. ZEPYAA 0044-3328 10.1007/BF01329843 118, 539 (1942).
12. C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. G. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. S. Rai, E. A. Hebert, Hsing-Huang Tseng, S. G. H. Anderson, B. E. White, and P. J. Tobin, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2004.829513 51, 971 (2004).
13. F. G. Allen and G. W. Gobeli, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.127.150 127, 150 (1962).
14. V. Milman, B. Winkler, J. A. White, C. J. Pickard, M. C. Payne, E. V. Akhmatskaya, and R. H. Nobes, Int. J. Quantum Chem. IJQCB2 0020-7608 10.1002/(SICI)1097-461X(2000)77:5<895::AID-QUA10>3.0.CO;2-C 77, 895 (2000).
15. J. Robertson and C. W. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123476 74, 1168 (1999);
16. J. Robertson, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.591472 18, 1785 (2000).
17. J. Bardeen, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.71.717 71, 717 (1947).
18. R. Lin, A. Lu, P. Ranade, T. J. King, and C. Hu, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.974809 23, 49 (2002).
19. D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X.-D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, B. E. White, Jr., and P. Tobin, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1784821 151, F220 (2004).
20. A. A. Demkov, L. R. C. Fonseca, E. Verret, J. Tomfohr, and O. F. Sankey, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.195306 71, 195306 (2005).
21. A. Demkov, D. Triyoso, P. Fejes, R. Gregory, O. Sharia, and S. Zollner (unpublished).
22. A. A. Demkov, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/1521- 3951(200107)226:1<57::AID-PSSB57>3.0.CO;2-L 226, 57 (2001).
23. V. Heine, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.138.A1689 138, A1689 (1965).
24. Ig. Tamm, Phys. Z. Sowjetunion PHZSAL 0369-9811 1, 733 (1932).
25. L. Fonseca, A. A. Demkov, and A. Knizhnik, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200303243 239, 48 (2003).
26. S. Picozzi, G. Profeta, A. Continenza, S. Massidda, and A. J. Freeman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.165316 65, 165316 (2002).
27. M. Ikeda, G. Kresse, T. Nabatame, and A. Toriumi, Mater. Res. Soc. Symp. Proc. No. 786 (Materials Research Society, Pennsylvania, 2004), p. E5.4.1.
28. CRC Handbook of Chemistry and Physics, 76th ed. (Chemical Rubber Press, Boca Raton, FL, 1996).
29. The second effect may also be important at the Si Hf O2 interface and indeed has recently been reported by E. J. Preisler, S. Guha, M. Copel, N. A. Bojarczuk, M. C. Reutor, and E. Gusev, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1834995 85, 6230 (2004).
30. D. Cubicciotti, J. Nucl. Mater. JNUMAM 0022-3115 154, 53 (1988).
31. I. Barin, O. Knacke, and O. Kubaschewski, Thermochemical Properties of Inorganic Substances (Springer-Verlag, Berlin, 1977).
32. A. Navrotsky and S. V. Ushakov, in Material Fundamentals of Gate Dielectrics, edited by, A. A. Demkov, and, A. Navrotsky, (Springer, Dordrecht, 2005).