Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 31-33

  Wang, X P ^a   Li, Ming Fu ^a,b   Ren, C ^a   Yu, X F ^a   Shen, C ^a   Ma, H H ^a   Chin, Albert ^a   Zhu, C X ^a   Ning, Jiang ^b   Yu, M B ^b   Kwong, Dim Lee ^b,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

HfLaO; High dielectric; Metal gate; MOSFET

Indexed keywords

COMPOSITION; CRYSTALLIZATION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LANTHANUM; LEAKAGE CURRENTS; OXIDES; TEMPERATURE; TUNING;

GATE DIELECTRIC; METAL GATE; WORK FUNCTION;

MOSFET DEVICES;

EID: 33645471189     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859950     Document Type: Article

References (15)

1. G. D.Wilk, R. M.Wallace, and J. M. Anthony, "High-κ gate dielectrics: current status and materials properties considerations," J. Appl. Phys., vol. 89, p. 5243, 2001.
2. 2 on the physical and electrical properties of the dielectrics," IEEE Electron Device Lett., vol. 23, no. 11, p. 649, Nov. 2002.
3. S. H. Bae, C. H. Lee, R. Clark, and D. L. Kwong, "MOS characteristics of ultrathin CVD HfA1O gate dielectrics," IEEE Electron Devices Lett., vol. 24, no. 9, p. 556, Sep. 2003.
4. G. D.Wilk, R. M.Wallace, and J. M. Anthony, "Hafnium and zirconium silicates for advanced gate dielectrics," J. Appl. Phys., vol. 87, p. 484, 2000.
5. y advanced gate dielectrics with poly-Si gate electrode," in IEDM Tech. Dig., 2002, p. 857.
6. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, "Advanced CMOS transistors with a novel HfSiON gate dielectric," in Symp. VLSI Tech. Dig., 2002, p. 11.
7. 3 laminate gate dielectric," in IEDM. Tech. Dig., 2002, p. 853.
8. X. F. Yu, C. X. Zhu, X. P. Wang, M. F. Li, A. Chin, A. Y. Du, W. D. Wang, and D. L.Kwong, "High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric," in Symp. VLSI Tech. Dig., 2004, p. 110.
9. x and metal gates," in IEDM. Tech. Dig., 2003, p. 307.
10. H. Y. Yu, C. Ren, Y.-C. Yeo, J. F. Kang, X. P.Wang, H. H. H. Ma, M.-F. Li, D. S. H. Chan, and D.-L. Kwong, "Fermi pinning induced thermal instability of metal gate work functions," IEEE Electron Device Lett., vol. 25, no. 5, p. 337, May 2004.
11. X. P. Wang, M. F. Li, A. Chin, C. X. Zhu, J. Shao, W. Lu, X. C. Shen, A. Y. Du, A. C. H. Huan, J. S. Pan, and D.-L. Kwong, "Investigation of material and electrical properties of MOS capacitors with HfLaO high-κ gate dielectric," J. Appl. Phys., to be published.
12. 2 underlayers," Appl. Phys. Lett., vol. 83, p. 3546, 2003.
13. 2 gate stack for advanced CMOS Devices," in IEDM. Tech. Dig., 2003, p. 99.
14. S. Guha, E. Cartier,M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, "Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics," Appl. Phys. Lett., vol. 77, p. 2710, 2000.
15. Z. Ren, M. V. Fischetti, E. P. Gusev, E. A. Cartier, and M. Chudzik, "Inversion channel mobility in high-κ high performance MOSFETs," in IEDM. Tech. Dig., 2003, p. 793.