Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3143-3145

  Lee, Byoung Hun ^a   Jeon, Yongjoo ^a   Zawadzki, Keith ^a   Qi, Wen Jie ^a   Lee, Jack ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPUTTER DEPOSITION; THIN FILMS; TITANIUM DIOXIDE;

INTERFACIAL LAYER GROWTH;

SEMICONDUCTING FILMS;

EID: 0032614865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124089     Document Type: Article

References (15)

1. T. Inoue, T. Ohsuna, Y. Obara, Y. Yamamoto, M. Satoh, and Y. Sakurai, Jpn. J. Appl. Phys., Part 1 32, 1765 (1993).
2. L. Manchanda and M. Gurvitch, IEEE Electron Device Lett. 9, 180 (1988).
3. K. P. Pande, V. K. R. Nair, and D. Gutierrez, J. Appl. Phys. 54, 5436 (1983).
4. P. K. Roy and I. C. Kizilyalli, Appl. Phys. Lett. 72, 2835 (1998).
5. H. Kim, D. C. Gilmer, S. A. Campbell, and D. L. Polla, Appl. Phys. Lett. 69, 3860 (1996).
6. Y. Jeon, B. H. Lee, K. Zawadzki, W. Qi, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet., 797 (1998).
7. D. G. Howitt and A. B. Harker, J. Mater. Res. 2, 201 (1987).
8. N. S. Gluck, H. Sankur, J. Heuer, J. DeNatale, and W. J. Gunning, J. Appl. Phys. 69, 3037 (1991).
9. P. Alexandrov, J. Koprinarova, and D. Todorov, Solid-State Electron. 47, 1333 (1996).
10. W. D. Brown and W. W. Grannomann, Solid-State Electron. 21, 837 (1978).
11. T. Fuyuki and H. Matsunami, Jpn. J. Appl. Phys., Part 1 25, 1288 (1986).
12. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdal, Appl. Phys. Lett. 73, 1517 (1998).
13. S. C. Sun and T. F. Chen, Jpn. J. Appl. Phys., Part 1 36, 1346 (1997).
14. Y. Nishioka, H. Shinriki, and K. Mukai, J. Appl. Phys. 15, 2335 (1987).
15. M. A. Taubenblatt and C. R. Helms, J. Appl. Phys. 53, 6308 (1982).