Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 859-862

  Lee, B H ^b   Young, C D ^a   Choi, R ^a   Sim, J H ^a   Bersuker, G ^a   Kang, C Y ^a   Harris, R ^a   Brown, G A ^a   Matthews, K ^a   Song, S C ^a   Moumen, N ^b   Barnett, J ^a   Lysaght, P ^a   Choi, K S ^a   Wen, H C ^a   Huffman, C ^c   Alshareef, H ^c   Majhi, P ^d   Gopalan, S ^a   Peterson, J ^a   Kirsh, P ^b   Li, H J ^e   Gutt, J ^a   Gardner, M ^d   Huff, H R ^a   Zeitzoff, P ^a   Murto, R W ^c   Larson, L ^a   Ramiller, C ^b   more..

^a International SEMATECH   (United States)

^b IBM   (United States)

^c TI   (United States)

^d PHILIPS RESEARCH LABORATORIES   (Germany)

^e Infineon   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING (BATTERIES); DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRON TUNNELING; HOLE TRAPS; LEAKAGE CURRENTS; PHONONS; THRESHOLD VOLTAGE;

CHARGE TRAPS; EQUIVALENT OXIDE THICKNESS (EOT); FAST TRANSIENT CHARGING EFFECTS (FTCE); VOLTAGE SHIFT;

GATES (TRANSISTOR); SILICA;

CHARACTERIZATION METHODS; DC CHARACTERIZATION; EFFECT MODEL; FAST TRANSIENT CHARGING EFFECTS; HIGH- K; I-V MEASUREMENTS; INTRINSIC CHARACTERISTICS; TRANSIENT CHARGING; ULTRA-SHORT PULSED; VTH INSTABILITIES;

EID: 21644465398     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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