Effects of high-κ gate dielectric materials on metal and silicon gate workfunctions

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 342-344

  Yeo, Yee Chia ^a,b   Ranade, Pushkar ^a,b   King, Tsu Jae ^a,b   Hu, Chenming ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOSFETs; High dielectric materials; Interfaces; Metal gate; Workfunction

Indexed keywords

GATE DIELECTRIC; HAFNIUM DIOXIDE; INTERFACE DIPOLE THEORY; METAL GATE; WORKFUNCTIONS;

CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; PERMITTIVITY; POLYSILICON; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; ZIRCONIA;

DIELECTRIC MATERIALS;

EID: 0036609910     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004229     Document Type: Letter

References (10)

1. Dual-metal gate CMOS technology with ultra-thin silicon nitride gate dielectric
2. 2 gate dielectrics
3. Effects of high-κ dielectrics on the workfunctions of metal and silicon gates
4. Theory of semiconductor heterojunctions: The role of quantum dipoles
5. Electronic structure of a metal-semiconductor interface
6. Electronic properties of ideal and interface-modified metal-semiconductor interfaces
7. Band offsets of wide-band-gap oxides and implications for future electronic devices
8. Electronics structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide
9. 2 gate stack with poly-Si gate electrode
10. The theory of heterojunction band lineups