Improvement in high-k (HfO2/SiO2) reliability by incorporation of fluorine

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 417-420

  Seo, Kang Ill ^a   Sreenivasan, Raghavasimhan ^a   McIntyre, Paul C ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; HOLE TRAPS; HYSTERESIS; INTERFACES (MATERIALS);

GATE STACKS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

DIELECTRIC MATERIALS;

EID: 33847745031     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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