Band alignment at the La2Hf2O7/(001) Si interface

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Seguini, G ^a   Spiga, S ^a   Bonera, E ^a   Fanciulli, M ^a   Huamantinco, A Reyes ^b   Forst C J ^b   Ashman, C R ^b   Blochl P E ^b   Dimoulas, A ^c   Mavrou, G ^c  

^a LABORATORIO MDM   (Italy)

^b CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL ENERGY; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; PROBABILITY DENSITY FUNCTION; SILICON;

CONDUCTION BAND; GATE DIELECTRICS; MICROELECTRONIC DEVICES;

DIELECTRIC MATERIALS;

EID: 33646896809     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2204572     Document Type: Article

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