Fluorine incorporation at HfO2/SiO2 interfaces in high- k metal-oxide-semiconductor gate stacks: Local electronic structure

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Ha, Jeong Hee ^a   Seo, Kang Ill ^a   McIntyre, Paul C ^a   Sarawat, Krishna C ^b   Cho, Kyeongjae ^c,d  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

^d The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC STACKS; FLUORINE INCORPORATION; INTERFACIAL HF IONS;

COMPUTER SIMULATION; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; SURFACE CHEMISTRY;

HAFNIUM COMPOUNDS;

EID: 33947309904     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2712785     Document Type: Article

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