Reexamination of the role of nitrogen in oxynitrides - Fixed charge reduction in the p+-polysilicon gate MOS

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2777-2784

  Suizu, Yasumasa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

BF3; Boron penetration; C V characteristics; Dual gate CMOS; Fixed charge; Flat band voltage; Fluorine; Nitrogen distribution; Oxynitride; P+ polysilicon gate

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MOSFET DEVICES; POLYSILICON; SEMICONDUCTOR DOPING;

FLAT-BAND VOLTAGE;

MOS DEVICES;

EID: 0035694371     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974703     Document Type: Article

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