NMOS compatible work function of TaN metal gate with gadolinium oxide buffer layer on Hf-based dielectrics

IEEE Electron Device Letters

Volumn 27, Issue 10, 2006, Pages 802-804

  Thareja, Gaurav ^a   Wen, Huang Chun ^b   Harris, Rusty ^b   Majhi, Prashant ^b   Lee, Byung Hun ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

Dipole theory; Gd2O3; HfO2; HfSiOx; Metal gate; Tantalum nitride (TaN); Terraced oxide; Work function

Indexed keywords

DIPOLE THEORY; GD2O3; HFO2; HFSIOX; METAL GATE; TANTALUM NITRIDE (TAN); TERRACED OXIDE;

BUFFER LAYERS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATE DIELECTRICS; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; METALS; NITRIDES; SOIL CONSERVATION; TANNING; TANTALUM; TANTALUM COMPOUNDS; WORK FUNCTION;

GADOLINIUM;

EID: 34948860910     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.882521     Document Type: Article

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