Thermally stable fully silicided Hf-silicide metal-gate electrode

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 372-374

  Park, Chang Seo ^a   Cho, Byung Jin ^a   Kwong, Dim Lee ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b The University of Texas at Austin   (United States)

Author keywords

CMOS; Dual metal gate; Hf silicide and work function; Silicide

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; THICKNESS MEASUREMENT;

METAL GATE ELECTRODE; OXIDE THICKNESS; WORK FUNCTION;

ELECTRODES;

EID: 2942708143     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.829043     Document Type: Letter

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