SCOPUS 정보 검색 플랫폼

Volumn 90, Issue 18, 2007, Pages

Effects of gate edge profile on off-state leakage suppresion in metal gate/high-k dielectric n-type metal-oxide-semiconductor field effect transistors

(4) Kang, Chang Yong a Choi, Rino a Song, S C a Lee, B H a

a SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; LEAKAGE CURRENTS; MOS DEVICES; OPTIMIZATION; PERMITTIVITY; STANDBY POWER SYSTEMS;

DRIVE CURRENT; GATE LEAKAGE; GATE STACK EDGE; LEAKAGE SUPPRESION;

FIELD EFFECT TRANSISTORS;

EID: 34247880431 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2734381 Document Type: Article

Times cited : (3)

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