Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 160-161

  Wen, H C ^a   Song, S C ^a   Park, C S ^a   Burham, C ^e   Bersuker, G ^a   Choi, K ^a   Quevedo Lopez, M A ^b   Ju, B S ^a   Alshareef, H N ^b   Niimi, H ^b   Park, H B ^c   Lysaght, P S ^a   Majhi, P ^d   Lee, B H ^a   Jamrny, R ^a  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c SAMSUNG ^*

^d INTEL CORPORATION   (United States)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION OF AL; EFFECTIVE WORK FUNCTION (EWF); GATE FIRST; GATE STACKS; HIGH K DIELECTRICS; LOW STAND BY POWER (LSP); LOW THRESHOLD VOLTAGE; METAL GATE ELECTRODES; VLSI TECHNOLOGIES;

ALUMINA; DIELECTRIC MATERIALS; ELECTRODES; LIGHT METALS; METALLIZING; METALS; MOLYBDENUM; MOSFET DEVICES; NITRIDES; REFRACTORY METAL COMPOUNDS; TANTALUM; TITANIUM NITRIDE;

ALUMINUM;

EID: 37749040743     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339766     Document Type: Conference Paper

References (10)

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4. D.-G. Park et al., IEDM, p. 671, 2001;
5. H. Alshareef et al., APL, v88.p.072108, 2006;
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10. ITRS 2005