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Volumn 46, Issue 2-3, 2002, Pages 317-338

Process requirements for continued scaling of CMOS - The need and prospects for atomic-level manipulation

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

EID: 0036508378     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.462.0317     Document Type: Article
Times cited : (24)

References (86)
  • 1
    • 0009599617 scopus 로고    scopus 로고
    • update, International Sematech, Austin, TX
    • (2000)
  • 70
    • 0000079776 scopus 로고
    • New approach to grow pseudomorphic structures over the critical thickness
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 2311-2313
    • Lo, Y.H.1
  • 71
    • 0003148754 scopus 로고
    • Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thickness
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 43-45
    • Teng, D.1    Lo, Y.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.