The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 826-831

  Mohapatra, Nihar R ^a,b   Desai, Madhav P ^a,b   Narendra, Siva G ^c   Rao, V Ramgopal ^a,b  

^a IEEE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c INTEL CORPORATION   (United States)

Author keywords

Circuit simulation; Fringing field; Gate insulator; High K dielectric; Monte Carlo methods and leakage current; MOSFETs; Short channel effect

Indexed keywords

CIRCUIT SIMULATION; DEEP SUBMICROMETER DEVICE; FRINGING FIELD; GATE INSULATOR; HIGH K GATE DIELECTRICS; SHORT CHANNEL EFFECT;

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MONTE CARLO METHODS; MOSFET DEVICES; PERMITTIVITY; SHORT CIRCUIT CURRENTS; SILICA; SPURIOUS SIGNAL NOISE;

CMOS INTEGRATED CIRCUITS;

EID: 0036564323     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998591     Document Type: Article

References (12)

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5. 2 dielectrics
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