A novel in situ plasma treatment for damage-free metal/high-k gate stack RIE process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Ju, B S ^a   Song, S C ^a   Lee, T H ^b   Sassman, B ^a   Kang, C Y ^a   Lee, B H ^c   Jammy, R ^c  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON DEVICES; PLASMA APPLICATIONS;

DRY ETCH PROCESSES; GATE STACKS; HIGH-K DIELECTRICS; IN SITU PLASMA TREATMENT; IN-SITU; INTEGRATION PROBLEMS; SOURCE AND DRAIN; WET-ETCH;

PLASMAS;

EID: 46049110958     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346866     Document Type: Conference Paper

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