Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Kirsch, P D ^a,c   Quevedo Lopez, M A ^a,d   Krishnan, S A ^a   Lee, B H ^a,c   Pant, G ^b   Kim, M J ^b   Wallace, R M ^b   Gnade, B E ^b  

^a SEMATECH   (United States)

^b The University of Texas at Dallas   (United States)

^c IBM RESEARCH   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CRITICAL THICKNESS; CRYSTALLINE GRAIN BOUNDARIES; DIELECTRIC CRYSTALLIZATION;

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ELECTRON MOBILITY; ELECTRON TRAPS; GATES (TRANSISTOR); GRAIN BOUNDARIES; HAFNIUM COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 33845781560     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2392992     Document Type: Article

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