Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 7-8

  Alshareef, H N ^b   Harris, H R ^c   Wen, H C ^a   Park, C S ^a   Huffman, C ^b   Choi, K ^a   Luan, H F ^c   Majhi, P ^d   Lee, B H ^e   Jammy, R ^e   Lichtenwalner, D J ^c   Jur, J S ^c   Kingon, A I ^c  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c North Carolina State University   (United States)

^d INTEL CORPORATION   (United States)

^e IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL GATES; SURFACE PASSIVATION;

GATE DIELECTRICS; MOSFET DEVICES; PASSIVATION; SURFACE TREATMENT; TRANSISTORS;

DIELECTRIC MATERIALS;

EID: 41149169700     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. D.J. Lichtenwalner et al., J. Appl. Phys. 98, 4314 (2005).
2. T. Gougousi et al. Appl. Phys. Lett. 80, 4419 (2002).
3. C.C. Hobbs et al, IEEE Trans. Elect. Devices 51, 971 (2004).
4. X.P. Wang, IEEE Electron Device Lett. 27, 31(2006).
5. M. Quevedo-Lopez et al., IEDM 2005, 437(2005).