Improved reliability of HfO2/SiON gate stack by fluorine incorporation

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 240-242

  Lu, Wen Tai ^a   Chiein, Chao Hsin ^a,b   Lan, Wen Ting ^a   Lee, Tsung Chieh ^a   Lehnen, Peer ^c   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c AIXTRON AG   (Germany)

Author keywords

Bias temperature instability (BTI); Fluorine (F); Hafnium oxide; Plasma charging damage

Indexed keywords

ELECTRIC PROPERTIES; FLUORINE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

BIAS TEMPERATURE INSTABILITY (BTI); HAFNIUM OXIDE; PLASMA CHARGING DAMAGE;

MOSFET DEVICES;

EID: 33645644996     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.871539     Document Type: Article

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