SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 22, 2005, Pages 1-3

Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors

(8) Kang, Chang Yong a Lysaght, Pat b Choi, Rino a Lee, Byoung Hun b Rhee, Se Jong a Choi, Chang Hwan a Akbar, M S a Lee, Jack C a

a The University of Texas at Austin (United States)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATE ELECTRODES; POSTDEPOSITION ANNEALING (PDA); SILICIDATION TEMPERATURE;

CAPACITORS; DEPOSITION; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; X RAY DIFFRACTION;

PHASE SHIFT;

EID: 20844433992 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1942633 Document Type: Article

Times cited : (29)

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