Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2945-2948

  Krishnan, Siddarth A ^a   Quevedo, Manuel ^a,c   Harris, Rusty ^a,c   Kirsch, Paul D ^a,d   Choi, Rino ^a   Lee, Byoung Hun ^a,d   Bersuker, Gennadi ^a   Lee, Jack C ^b  

^a SEMATECH   (United States)

^b The University of Texas at Austin   (United States)

^c TI ^*

^d IBM   (United States)

Author keywords

Charge trapping; High ; Hydrogen reaction diffusion; NBTI; Threshold voltage instability

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; NITROGEN; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

CHARGE TRAPPING; HIGH-Κ; HYDROGEN REACTION DIFFUSION; NBTI; THRESHOLD VOLTAGE INSTABILITY;

GATES (TRANSISTOR);

EID: 33646934980     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2945     Document Type: Article

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