Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Wen, Huang Chun ^a,g   Choi, Kisik ^a   Park, C S ^a   Majhi, Prashant ^b   Rusty Harris, H ^c   Niimi, Hiro ^d   Park, Hong Bae ^e   Bersuker, Gennadi ^a   Lysaght, Patrick ^a   Kwong, D L ^g   Song, S C ^a   Lee, Byoung Hun ^f   Jammy, Raj ^f  

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d TEXAS INSTRUMENTS   (United States)

^e SAMSUNG   (United States)

^f IBM   (United States)

^g The University of Texas at Austin

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; MOS DEVICES; WORK FUNCTION;

FERMI LEVEL PINNING; METAL ELECTRODES; PINNING EFFECTS;

ELECTRODES;

EID: 34548834719     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378910     Document Type: Conference Paper

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