Enhanced reliability and performance of high-k MOSFET by two-step annealing

Electrochemical and Solid-State Letters

Volumn 9, Issue 4, 2006, Pages

  Rahman, M Shahriar ^a   Park, Hokyung ^a,b   Chang, Man ^a   Lee, Dongsoo ^a   Lee, Byoung Hun ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HOT CARRIERS; HYDROGEN; OPTIMIZATION; THRESHOLD VOLTAGE;

HOT CARRIER INJECTION; HYDROGEN ANNEALING; TWO-STEP ANNEALING;

MOSFET DEVICES;

EID: 33244458643     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2168287     Document Type: Article

References (16)

1. International Technology Roadmap for Semiconductors (ITRS) 2004, update p. 4, available at www.itrs.net/common/2004Update
2. J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).
3. M. Houssa, High- k Gate Dielectric, IOP Publishing, Ltd., Bristol, U.K. (2004).
4. A. S. Oates, Tech. Dig. - Int. Electron Devices Meet., 2003, 38.2.1.
5. K. Onishi, C. Kang, R. Choi, H. Cho, S. Gopalan, R. Nieh, E. Dharmarajan, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 2001, 659.
6. R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, and M. Heyns, Appl. Phys. Lett., 83, 533 (2003).
7. H. Hwang, U.S. Pat. 6,913,961 (2005).
8. H. Park, M. S. Rahman, M. Chang, B. H. Lee, R. Choi, C. D. Young, and H. Hwang, IEEE Electron Device Lett., 26, 725 (2005).
9. G. Bersuker, J. Gutt, N. Chaudhary, N. Moumen, B. H. Lee, J. Barnett, S. Gopalan, G. Brown, Y. Kim, C. D. Young, J. Peterson, H.-J. Li, P. M. Zeizoff, J. H. Sim, P. Lysaght, M. Gardner, R. W. Murto, and H. R. Huff, in Proceedings of International Reliability of Physics Symposium, 2004, 479.
10. K. Onishi, R. Choi, C. S. Kang, H.-J. Cho, Y. H. Kim, R. E. Nieh, J. Han, S. A. Krishnan, M. S. Akbar, and J. C. Lee, IEEE Trans. Electron Devices, 50, 1517 (2003).
11. K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. Neih, S. A. Krishnan, and J. C. Lee, IEEE Trans. Electron Devices, 50, 384 (2003).
12. M. Takayanagi, T. Wantanabe, R. Iijima, K. Ishimaru, and Y. Tsunashima, in Proceedings of International Reliability of Physics Symposium, 2004, 13.
13. B. H. Lee, H. J. Sim, R. Choi, G. Bersuker, K. Matthew, N. Moumen, J. J. Peterson, and L. Larson, in Proceedings of International Reliability of Physics Symposium, 2004, 691.
14. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett., 68, 2526 (1996).
15. K. Hess, I. C. Kizilyalli, and J. W. Lyding, IEEE Trans. Electron Devices, 45, 406 (1998).
16. D. K. Schroder and J. A. Babcock, J. Appl. Phys., 94, 1 (2003).