SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 9, 2010, Pages

Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon

(3) Baykan, Mehmet O a Thompson, Scott E a Nishida, Toshikazu a

a University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING RATIO; BALLISTICITY; BAND SPLITTING; BENEFICIAL EFFECTS; CARRIER CONDUCTIVITY; CARRIER CONFINEMENTS; CARRIER DISTRIBUTIONS; CARRIER SCATTERING; CLASSIFICATION SCHEME; CONFINED VOLUME; CROSS SECTION; DEGREES OF FREEDOM; DEVICE GEOMETRIES; EFFECTIVE MASS; EFFECTS OF STRAINS; HIGH-FIELD; IN-BAND; LOW FIELD; LOWER ENERGIES; MASS REDUCTION; MECHANICAL STRAIN; MOBILE CARRIERS; PLANAR METAL; QUASI-BALLISTIC TRANSPORT; REPOPULATION; SPATIAL CONFINEMENT; SPLITTING ENERGY; STRAIN EFFECT; STRAIN LEVELS; STRAINED SILICON; SURFACE ROUGHNESS SCATTERING; SURFACE SCATTERING;

BAND STRUCTURE; FIELD EFFECT TRANSISTORS; LOGIC DEVICES; MOSFET DEVICES; SCATTERING; SEMICONDUCTOR DEVICES; SURFACE ROUGHNESS;

ELECTROSTATIC DEVICES;

EID: 78649295424 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3488635 Document Type: Article

Times cited : (55)

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