A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 866-871

  Liu, Yang ^a   Neophytou, Neophytos ^a   Low, Tony ^a   Klimeck, Gerhard ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Band structure; Effective mass; Injection velocity; MOSFETs; Nonparabolicity; Pseudopotential (PP); Quantum confinement; Tight binding (TB); Ultrathin body (UTB)

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; MATHEMATICAL MODELS; POISSON EQUATION; SILICON ON INSULATOR TECHNOLOGY;

BALLISTIC INJECTION VELOCITY; TIGHT-BINDING; ULTRATHIN-BODY;

MOSFET DEVICES;

EID: 40949136577     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.915056     Document Type: Article

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