Fabrication of uniaxially strained silicon nanowires

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 320-322

  Feste, S F ^a   Knoch, J ^a,b   Buca, D ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Nanowire; Strain relaxation; Strained silicon; Uniaxial strain

Indexed keywords

CHEMICAL OXYGEN DEMAND; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OXIDATION; SILICON; STRAIN CONTROL; STRAIN RELAXATION;

ELASTIC STRAIN RELAXATIONS; OXIDATION PROCESSES; REACTIVE IONS; STRAINED SILICON; STRAINED SILICON ON INSULATORS; STRAINED SILICONS; SURFACE SMOOTHING; TENSILE; UNIAXIAL STRAIN; WIRE DIAMETERS;

REACTIVE ION ETCHING;

EID: 54849438294     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.141     Document Type: Article

References (10)

1. Cui Y., et al. Nano Lett. 3 (2003) 149
2. Takagi S., et al. Solid-State Electron. 49 (2005) 684
3. Thompson S.E., et al. IEEE Trans. Electron Devices 51 (2004) 1790
4. Buca D., et al. Appl. Phys. Lett. 90 (2007) 032108
5. Thean A.V.-Y., et al. Int. Electron. Devices Meeting, Technical Digest (2005) 509-512
6. Comsol Multiphysics. [Online]. Available: http://comsol.com.
7. Buca D., et al. Appl. Phys. Lett. 85 (2004) 2499
8. Mantl S., et al. ECS Transactions 3 (2006) 317
9. Kedzierski J., and Bokor J. J. Vac. Sci. Technol., B 15 (1997) 2825
10. Liu H., Bieglsen D.K., Ponce F.A., Johnson N.M., and Pease R.F.W. Appl. Phys. Lett. 64 (1994) 1385