Scalability of hole mobility enhancement in biaxially strained ultrathin body SOI

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 402-404

  Khakifirooz, Ali ^a   Antoniadis, Dimitri A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Band structure; Biaxial strain; Effective mass; Silicon on insulator (SOI); Tight binding; Ultrathin body

Indexed keywords

BAND STRUCTURE; HOLE MOBILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN; TENSILE STRESS;

BIAXIAL STRAIN; EFFECTIVE MASS; TIGHT BINDING; ULTHRATHIN BODY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33646255667     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873877     Document Type: Article

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