Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 191-194

  Moselund, K E ^a   Dobrosz, P ^b   Olsen, S ^b   Pott, V ^a   De Michielis, L ^a   Tsamados, D ^a   Bouvet, D ^a   O'Neill, A ^b   Ionescu, A M ^a  

^a EPFL   (Switzerland)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHITECTURAL ACOUSTICS; CHEMICAL OXYGEN DEMAND; ELECTRIC WIRE; ELECTRON DEVICES; MOSFET DEVICES; OXIDATION;

ENHANCED CARRIER MOBILITY; GATE-ALL-AROUND; LOW FIELDS; LOW TEMPERATURES; MOBILITY ENHANCEMENT; MOSFETS; NANO WIRES; PERFORMANCE GAINS;

CARRIER MOBILITY;

EID: 50249181180     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418899     Document Type: Conference Paper

References (9)

1. Y. Tateshita et al., Techn. Dig. IEDM, 2006. Dec. 2006, pp. 1-4.
2. I. Post et al., Techn. Dig. IEDM, 2006. Dec. 2006, pp. 1-3.
3. K. Uchida et al.,Techn. Dig. IEDM, 2004. Dec. 2004, pp. 229-232.
4. S. M. Koo et al., Nanoletters, Vol. 4, no.11, 2004, pp.2197-2201.
5. R. He and P. Yang, Nature nanotechnology, Vol. 1, Oct. 2006, pp. 42-46.
6. K. E. Moselund et al., Proc. ESSDERC, pp. 359-362, Sept. 2006.
7. S. L. Wu et al., Electron Dev. Lett. Vol. 27, No. 1, 2006.
8. O. Roux-dit-Buisson, G. Ghibaudo and J. Brini IEEE Proceedings-G, Vol. 140, No. 2, pp. 123-126, April 1993.
9. H. Mikoshiba, Solid-State Electronics, Vol. 24, 1981, pp. 221-232.