Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 768-770

  Chen, William P N ^a,b   Su, Pin ^a   Goto, K ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Coulomb mobility; MOSFET; Strained silicon

Indexed keywords

ELECTRIC CURRENTS; MOSFET DEVICES;

COULOMB SCATTERING; EXPERIMENTAL ASSESSMENT; INTERFACE CHARGES; INTERFACE SCATTERING; MOBILITY EXTRACTION; MOBILITY SCALING; N MOSFETS; PROCESS INDUCED STRAIN (PIS); STRESS SENSITIVITY; TEMPERATURE DEPENDENCES; UNI-AXIAL STRAINS;

SCATTERING;

EID: 47349105613     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000909     Document Type: Article

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