Physics of carrier backscattering in one- and two-dimensional nanotransistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 1, 2009, Pages 132-139

  Kim, Raseong ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

MOSFETs; Nanowire (NW) transistor; Scattering; Semiconductor device modeling

Indexed keywords

ANALYTICAL FORMULAS; BACKSCATTERING COEFFICIENTS; CHANNEL POTENTIAL; CRITICAL LENGTH; D-CHANNEL; ELASTIC PROCESS; INELASTIC PROCESS; MC SIMULATION; MONTE CARLO SIMULATIONS; MOSFETS; NANO TRANSISTORS; NANOWIRE (NW) TRANSISTOR; NUMERICAL SIMULATION; PHONON ENERGIES; SCATTERING RATES; SEMICONDUCTOR DEVICE MODELING;

BACKSCATTERING; COMPUTER SIMULATION; MOSFET DEVICES; NANOWIRES; PHONONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

TRANSISTORS;

EID: 70349139689     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2008368     Document Type: Article

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