Electronic properties of silicon nanowires

IEEE Transactions on Electron Devices

Volumn 52, Issue 6, 2005, Pages 1097-1103

  Zheng, Yun ^a   Rivas, Cristian ^b   Lake, Roger ^a   Alam, Khairul ^a   Boykin, Timothy B ^c   Klimeck, Gerhard ^d,e  

^a United States   (United States)

^b University of Texas ^*  (United States)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^d Purdue University ^*  (United States)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Nanowires (NWs); Silicon nanowires (SiNWs)

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GREEN'S FUNCTION; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WIRES;

QUANTUM CONFINEMENT; SILICON NANOWIRES;

NANOTECHNOLOGY;

EID: 21044456044     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.848077     Document Type: Article

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