Coupled mechanical and 3D Monte Carlo simulation of silicon nano wire MOSFETs

IEEE Transactions on Nanotechnology

Volumn 6, Issue 6, 2007, Pages 659-665

  Ghetti, Andrea ^a,b   Carnevale, GianPietro ^b   Rideau, Denis ^c  

^a IEEE   (Italy)

^b STMICROELECTRONICS   (Italy)

^c STMICROELECTRONICS   (France)

Author keywords

Monte Carlo simulation; Nanowire MOSFET; Quantum effects; Strained silicon

Indexed keywords

EMPIRICAL PSEUDO-POTENTIAL METHOD; MONTE CARLO TRANSPORT MODEL; NANOWIRE MOSFET; QUANTUM EFFECTS; STRAINED SILICON;

COMPUTER SIMULATION; MONTE CARLO METHODS; NANOWIRES; QUANTUM THEORY; SILICON;

MOSFET DEVICES;

EID: 36349024439     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.908491     Document Type: Article

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