Reduced carrier backscattering in heterojunction SiGe nanowire channels

Applied Physics Letters

Volumn 93, Issue 25, 2008, Pages

  Jiang, Y ^a,b   Singh, N ^a   Liow, T Y ^a   Lo, G Q ^a   Chan, D S H ^b   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; BAND STRUCTURE; CARRIER CONCENTRATION; CIVIL AVIATION; GERMANIUM; HOLE CONCENTRATION; MODULATION; NANOWIRES; SCATTERING; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; TRANSISTORS;

ANALYTICAL MODELS; BACKSCATTERING COEFFICIENTS; BARRIER LAYERS; CHANNEL BARRIERS; ENERGY BAND PROFILES; GE CONCENTRATIONS; MOLE FRACTIONS; PLANAR DEVICES; SIGE NANOWIRES; SOURCE/DRAIN REGIONS;

FIELD EFFECT TRANSISTORS;

EID: 58149171628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050527     Document Type: Article

References (17)

1. Y. M. Li, H. M. Chou, and J. W. Lee, IEEE Trans. Nanotechnol. 4, 510 (2005).
2. K. Suzuki, T. Tanaka, Y. Tosaka, H. Horie, and Y. Arimoto, IEEE Trans. Electron Devices 0018-9383 10.1109/16.249482 40, 2326 (1993).
3. K. H. Yeo, S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Cho, K. -H. Hong, S. K. Yun, M. S. Lee, N. M. Cho, K. H. Lee, D. Hwang, B. K. Park, D. W. Kim, D. G. Park, and B. I. Ryu, Tech. Dig.-Int. Electron Devices Meet. 2006, 539. 0018-9383
4. N. Singh, F. Y. Lim, W. W. Fang, S. C. Rustagi, L. K. Bera, A. Agarwal, C. H. Tung, K. M. Hoe, S. R. Omampuliyur, D. Tripathi, A. O. Adeyeye, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 2006, 547. 0018-9383
5. Y. Tian, R. Huang, Y. Wang, J. Zhuge, R. Wang, J. Liu, X. Zhang, and Y. Wang, Tech. Dig.-Int. Electron Devices Meet. 2007, 895. 0018-9383
6. J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature (London) 0028-0836 10.1038/nature04796 441, 489 (2006).
7. Y. Jiang, N. Singh, T. Y. Liow, W. Y. Loh, S. Balakumar, K. M. Hoe, C. H. Tung, V. Bliznetsov, S. C. Rustagi, G. Q. Lo, D. S. H. Chan, and D. L. Kwong, IEEE Electron Device Lett. 29, 595 (2008). 0028-0836
8. T. Mizuno, T. Irisawa, and S. Takagi, IEEE Trans. Electron Devices 54, 2598 (2007). 0018-9383
9. S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. Takagi, Appl. Phys. Lett. 0003-6951 10.1063/1.1622442 83, 3516 (2003).
10. A. Rahman and M. S. Lundstrom, IEEE Trans. Electron Devices 0018-9383 10.1109/16.987120 49, 481 (2002).
11. S. Balakumar, G. Q. Lo, C. H. Tung, R. Kumar, N. Balasubramanian, D. L. Kwong, F. Gao, and S. J. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2222341 89, 042115 (2006).
12. T. -Y. Liow, K. -M. Tan, Y. -C. Yeo, A. Agarwal, C. -H. Tung, and N. Balasubramanian, Appl. Phys. Lett. 0003-6951 10.1063/1.2151257 87, 262104 (2005).
13. S. Takagi, T. Irisawa, T. Tezuka, T. Numara, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Sugahara, M. Takenaka, and N. Sugiyama, IEEE Trans. Electron Devices 55, 21 (2008). 0018-9383
14. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, 3rd ed. (Springer, New York, 2001).
15. H. -N. Lin, H. -W. Chen, C. -H. Ko, C. -H. Ge, H. -C. Lin, T. -Y. Huang, W. -C. Lee, and D. D. Tang, Dig. Tech. Pap.-Symp. VLSI Technol. 2005, 174.
16. K. W. Ang, H. C. Chin, K. J. Chui, M. F. Li, G. Samudra, and Y. C. Yeo, ESSDERC, 2006 (unpublished), pp. 89-92.
17. H. -N. Lin, H. -W. Chen, C. -H. Ko, C. -H. Ge, H. -C. Lin, T. -Y. Huang, and W. -C. Lee, Tech. Dig.-Int. Electron Devices Meet. 2005, 141. 0018-9383