Theory of ballistic nanotransistors

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1853-1864

  Rahman, Anisur ^a   Guo, Jing ^a   Datta, Supriyo ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Ballistic MOSFET; Device simulation; Double gate MOSFETs; Quantum effects; Semiconductor device modeling; Ultra thin body

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; GREEN'S FUNCTION; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; TRANSPORT PROPERTIES;

BALLISTIC FIELD-EFFECT TRANSISTOR; BALLISTIC NANOTRANSISTOR; QUANTUM CAPACITANCE; SEMICONDUCTOR QUANTUM CAPACITANCE; TWO DIMENSIONAL ELECTROSTATIC EFFECT;

MOSFET DEVICES;

EID: 0041761616     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815366     Document Type: Article

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