Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6269-6275

  Gamiz F ^a   Roldan J B ^a   Cartujo Cassinello, P ^a   Carceller, J E ^a   Lopez Villanueva J A ^a   Rodriguez, S ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3242844030     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371684     Document Type: Article

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