On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1589-1595

  Wang, Jing ^a   Rahman, Anisur ^a   Ghosh, Avik ^a   Klimeck, Gerhard ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Bandstructure; Effective mass; Field effect transistor (FET); Nanowire; Nonparabolicity; Quantum confinement; Tight binding

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

BANDSTRUCTURE; EFFECTIVE MASS APPROXIMATION; NONPARABOLICITY; QUANTUM CONFINEMENT; SILICON NANOWIRE TRANSISTORS; TIGHT BINDING;

MOSFET DEVICES;

EID: 23944454004     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850945     Document Type: Article

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