SCOPUS 정보 검색 플랫폼

Volumn 107, Issue 11, 2010, Pages

On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias

(4) Neophytou, Neophytos a Kim, Sung Geun b Klimeck, Gerhard b Kosina, Hans a

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b Purdue University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC CURRENT; BALLISTIC TRANSPORTS; CARRIER VELOCITY; CHANNEL MOBILITY; COMPREHENSIVE ANALYSIS; CROSS SECTION; CROSS-SECTION GEOMETRY; EFFECTIVE MASS; ENHANCED PERFORMANCE; FIELD-EFFECT; HIGH PERFORMANCE DEVICES; HOST MATERIALS; METAL OXIDE SEMICONDUCTOR; ON-CURRENTS; P-TYPE; SEMI-EMPIRICAL; SILICON NANOWIRE TRANSISTORS; SILICON NANOWIRES; SPIN ORBITS; STRUCTURE GEOMETRY; TIGHT BINDING MODEL; TRANSISTOR MODEL;

BALLISTICS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; MOS DEVICES; NANOWIRES; SENSITIVITY ANALYSIS; VELOCITY;

CARRIER MOBILITY;

EID: 77953631112 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3372764 Document Type: Article

Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.