Experimental examination and physical understanding of the Coulomb scattering mobility in strained-Si nMOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2386-2396

  Weber, Olivier ^a,b   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b CEA GRENOBLE   (France)

Author keywords

Heterostructure; Mobility enhancement; MOS devices; MOSFET mobility; MOSFETs; Scattering; Silicon

Indexed keywords

ELECTRIC CURRENTS; ELECTRON MOBILITY; SILICON;

BIAXIAL TENSILE STRAIN; COULOMB SCATTERING; EXPERIMENTAL EXAMINATION; HETEROSTRUCTURE; INTERFACE STATES; INVERSION LAYERS; MOBILITY ENHANCEMENT; MOS DEVICES; MOSFET MOBILITY; MOSFETS; N-MOSFETS; SCATTERING; STRAINED-SI;

TENSILE STRAIN;

EID: 50549100943     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.927388     Document Type: Article

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