Strain effects on electronic bandstructures in nanoscaled silicon: From bulk to nanowire

IEEE Transactions on Electron Devices

Volumn 56, Issue 4, 2009, Pages 553-559

  Maegawa, Tadashi ^a   Yamauchi, Tsuneki ^a   Hara, Takeshi ^a   Tsuchiya, Hideaki ^a   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

Band splitting; Bandstructure; Effective mass; First principles calculation; Quantum confinement; Si nanostructure; Strained Si channel

Indexed keywords

BAND SPLITTING; BANDSTRUCTURE; EFFECTIVE MASS; FIRST PRINCIPLES CALCULATION; SI NANOSTRUCTURE; STRAINED-SI CHANNEL;

NANOWIRES; QUANTUM CONFINEMENT; SILICON; THIN FILM DEVICES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65449154302     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2014185     Document Type: Article

References (21)

1. S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, and N. Sugiyama, "Carrier-transport-enhanced channel CMOS for improved power consumption and performance," IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 21-39, Jan. 2008.
2. S. E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida, "Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs," in IEDM Tech. Dig., 2004, pp. 221-224.
3. L. Shifren, X. Wang, P. Matagne, B. Obradovic, C. Auth, S. Cea, T. Ghani, J. He, T. Hoffman, R. Kotlyar, Z. Ma, K. Mistry, R. Nagisetty, R. Shaheed, M. Stettler, C. Weber, and M. D. Giles, "Drive current enhancement in p-type metal-oxide-semiconductor field-effect transistors under shear uniaxial stress," Appl. Phys. Lett., vol. 85, no. 25, pp. 6188-6190, Dec. 2004.
4. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime," in IEDM Tech. Dig., 2005, pp. 135-138.
5. E. X. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, and M. D. Giles, "Physics of hole transport in strained silicon MOSFET inversion layers," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1840-1851, Aug. 2006.
6. E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr, "Physical modeling of electron mobility enhancement for arbitrarily strained silicon," J. Comput. Electron., vol. 6, no. 1-3, pp. 55-58, Sep. 2007.
7. J. Yamauchi, "Effective mass anomalies in strained-Si thin films and crystals," IEEE Electron Device Lett., vol. 29, no. 2, pp. 186-188, Feb. 2008.
8. D. Shiri, Y. Kong, A. Buin, and M. P. Anantram, "Strain induced change of bandgap and effective mass in silicon nanowires," Appl. Phys. Lett., vol. 93, no. 7, p. 073 114, Aug. 2008.
9. P. W. Leu, A. Svizhenko, and K. Cho, "Ab initio calculations of the mechanical and electronic properties of strained Si nanowires," Phys. Rev. B, Condens. Matter, vol. 77, no. 23, p. 235 305, Jun. 2008.
10. K.-H. Hong, J. Kim, S.-H. Lee, and J. K. Shin, "Strain-driven electronic band structure modulation of Si nanowires," Nano Lett. vol. 8, no. 5, pp. 1335-1340, May 2008.
11. G. Kresse and J. Furthmüller, "Efficient iterative schemes for ab initio total-energy calculation using a plane-wave basis set," Phys. Rev. B, Condens. Matter, vol. 54, no. 16, pp. 11 169-11 186, Oct. 1996.
12. T. Hara, Y. Yamada, T. Maegawa, and H. Tsuchiya, "Atomistic study on electronic properties of nanoscale SOI channels," J. Phys. Conf. Series, vol. 109, p. 012 012, 2008.
13. SOI-induced scattering," in IEDM Tech. Dig., 2003, pp. 805-808.
14. N. Neophytou, A. Paul, M. Lundstrom, and G. Klimeck, "Bandstructure effects in silicon nanowire electron transport," IEEE Trans. Electron Devices, vol. 55, no. 6, pp. 1286-1297, Jun. 2008.
15. T. Ando, A. B. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., vol. 54, no. 2, pp. 437-672, Apr. 1982.
16. A. Rahman, G. Klimeck, M. Lundstrom, T. B. Boykin, and N. Vagidov, "Atomistic approach for nanoscale devices at the scaling limit and beyond - Valley splitting in Si," Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2187-2190, Apr. 2005.
17. T. Hara, "First principles bandstructure calculations of ultrathin SOI channels," M.E. thesis, Grad. School Eng., Kobe University, Kobe, Japan, 2009 (in Japanese).
18. J. Wang, A. Rahman, A. Ghosh, G. Klimeck, and M. Lundstrom, "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1589-1595, Jul. 2005.
19. Y. Liu, N. Neophytou, T. Low, G. Klimeck, and M. Lundstrom, "A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs," IEEE Trans. Electron Devices, vol. 55, no. 3, pp. 866-871, Jun. 2008.
20. H. Scheel, S. Reich, and C. Thomsen, "Electronic band structure of high-index silicon nanowires," Phys. Stat. Sol. (B), vol. 242, no. 12, pp. 2474-2479, Oct. 2005.
21. S. You, M. Gao, and Y. Wang, "Band structure of surface terminated silicon nanowire," in Proc. Extended Abstracts Int. Conf. SSDM, Tsukuba, Japan, Sep. 2007, pp. 698-699.