Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Jin, Seonghoon ^a   Fischetti, Massimo V ^a   Tang, Ting Wei ^a  

^a University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIXED INTERFACE CHARGES; KUBO-GREENWOOD FORMULA; QUASI-ONE-DIMENSIONAL; RANDOM PHASE APPROXIMATIONS; SCATTERING POTENTIALS; SELF-CONSISTENT SOLUTION; SUBBAND WAVE FUNCTIONS; SURFACE ROUGHNESS SCATTERING;

APPROXIMATION ALGORITHMS; ELECTRON GAS; ELECTRON MOBILITY; NANOWIRES; SILICON; SURFACE ROUGHNESS;

SCATTERING;

EID: 84893264597     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2802586     Document Type: Article

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