Impact of stress engineering on the electron mobility and the ballistic current for strained Si NMOSFETs

Journal of the Korean Physical Society

Volumn 53, Issue 2 PART 1, 2008, Pages 1024-1029

  Chang, Shu Tong ^a   Liao, Shu Hui ^a,b   Wang, Wei Ching ^a   Lin, Chung Yi ^a   Fan, Jun Wei ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Ballistic current; Mobility; Self consistent; Subband; Uniaxial stress

Indexed keywords

EID: 50949128318     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.1024     Document Type: Conference Paper

References (17)

1. S. Suthram, J. C. Ziegert, T. Nishida and S. E. Thompson, IEEE Electron Device Lett. 28, 58 (2007).
2. Scott E. Thompson, Guangyu Sun, Youn Sung Choi and Toshikazu Nishida, IEEE Iran. Electron Devices 53, 1010 (2006).
3. T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffiann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson and M. Bohr, IEDM Technical Digest, 978 (2003).
4. M. Yang, V. W. C. Chan, K. K. Chan, L. Shi, D. M. Fried, J. H. Stathis, A. I. Chou, E. Gusev, J. A. Ott, L. E. Burns, M. V. Fischetti and M. Ieong, IEEE Trans. Electron Devices 53, 965 (2006).
5. H. Irie, K. Kita, K. Kyuno and A. Toriwni, IEDM Tech. Dig., 225 (2004).
6. L. Shifren, Appl. Phys. Lett. 85, 6188 (2004).
7. A. Rahman, J. Appl. Phys. 97, 53702 (2005).
8. K. Uchida, T. Krishnamohan, K. C. Saraswat and Y. Nishi, IEDM Technical Digest, 129 (2005).
9. G. Dresselhaus, A. F. Kip and C. Kittel, Phys. Rev. B 98, 368 (1955).
10. G. L. Bir and G. E. Pikus (eds.), Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974), p. 321
11. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14 276 (1993).
12. F. Stern arid W. E. Howard, Phys. Rev. 163, 816 (1967).
13. J. J. Wortman and R. A. Evans, J. Appl. Phys. 36, 153 (1965).
14. R. Kotlyar, M. D. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler and E. Wang, IEDM Tech. Dig., 301 (2004).
15. K. Natori, J. Appl. Phys. 76, 4879 (1994).
16. S. Takagi, Symp. VLSI Tech., 115 (2003).
17. M. De Michielis, D. Esseni and F. Driussi, IEEE Trans. Electron Devices 54, 115(2007).