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Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

Size-dependent properties of ballistic silicon nanowire field effect transistors

(5) Lee, Yeonghun a Kakushima, Kuniyuki a Shiraishi, Kenji b Natori, Kenji a Iwai, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT MODEL; CONDUCTION BAND EDGE; FIRST-PRINCIPLES CALCULATION; GATE CAPACITANCE; INJECTION VELOCITY; LANDAUER; MULTI-CHANNEL; ON-CURRENTS; PEAK VALUES; SATURATION VELOCITY; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; SUBBAND STRUCTURES; WIRE WIDTH;

BALLISTICS; CAPACITANCE; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; MESFET DEVICES; NANOWIRES; VELOCITY; WIRE;

FIELD EFFECT TRANSISTORS;

EID: 77953636556 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3388324 Document Type: Article

Times cited : (28)

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