Strain distribution around SiO2/Si interface in Si nano wires: A molecular dynamics study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3277-3282

  Ohta, Hiromichi ^a   Watanabe, Takanobu ^a,b   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Molecular dynamics simulation; Si nanowire; Strain and stress; Thermal oxidation

Indexed keywords

COMPUTER SIMULATION; FILM THICKNESS; MOLECULAR DYNAMICS; NANOCRYSTALLINE SILICON; OXIDE FILMS; THERMOOXIDATION;

MOLECULAR DYNAMICS SIMULATION; OXIDE REGIONS; THERMAL OXIDE FILMS;

NANOWIRES;

EID: 34547885491     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3277     Document Type: Article

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