Carrier mobility/transport in undoped-UTB DG FinFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1125-1131

  Chowdhury, Murshed M ^a   Trivedi, Vishal P ^a   Fossum, Jerry G ^b   Mathew, Leo ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b University of Florida   (United States)

Author keywords

Ballistic limit current; Double gate (DG) FinFET; Mobility; Nonclassical devices; Surface roughness; Ultrathin body

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HOLE MOBILITY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; ULTRATHIN FILMS;

BALLISTIC-LIMIT CURRENT; CARRIER MOBILITY MODEL; DOUBLE-GATE FINFET;

MOSFET DEVICES;

EID: 33847245696     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.893669     Document Type: Article

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