Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 163-164

  Suthram, Sagar ^e   Harris, H R ^b   Hussain, M M ^a   Smith, C ^a   Young, C D ^a   Yang, J W ^a   Mathews, K ^b   Freeman, K ^a   Majhi, P ^c   Tseng, H H H ^a   Jammy, R ^d   Thompson, Scott E ^e  

^a SEMATECH   (United States)

^b AMD Assignee ^*

^c INTEL CORPORATION   (United States)

^d IBM   (United States)

^e UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP NARROWING; CURRENT ENHANCEMENT; DELAY PERFORMANCES; DOUBLE GATES; DOUBLE-GATE; DRIVE CURRENT ENHANCEMENT; ETCH-STOP; FINFETS; GAIN INSIGHT; HOT-CARRIER DEGRADATION; HOT-CARRIER RELIABILITY; INTERNATIONAL SYMPOSIUM; PIEZO-RESISTANCE; RING OSCILLATORS; STRAIN EFFECTS; TENSION AND COMPRESSION; VLSI TECHNOLOGIES; WAFER BENDING;

BENDING (DEFORMATION); CIVIL AVIATION; EXPERIMENTS; FIELD EFFECT TRANSISTORS; GALERKIN METHODS; SECURITY SYSTEMS; SILICON; SILICON WAFERS; SULFATE MINERALS; TECHNOLOGY;

MOSFET DEVICES;

EID: 49049119165     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530848     Document Type: Conference Paper

References (8)

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8. K. Uchida, et. al., IEEE IEDM 2006.